Impact of new generation power semiconductors using SiC in photovoltaic inverters

“As the demand for photovoltaic power generation increases, the sales volume of photovoltaic inverters is increasing. The mass production effect should help reduce the cost of power semiconductors,” said Tsukamoto Sakamoto, executive director of Japan's Tatsuo Electric Machinery Co., Ltd. and managing power electronics business. Say this.

Photovoltaic inverters are devices that convert the electricity produced by solar panels from direct current to alternating current (DC/AC conversion). In Japan, with the implementation of a fixed price acquisition system for photovoltaic power generation, the installed capacity of photovoltaic power generation is centered on a megawatt-class (MW) class photovoltaic power station, and the installed capacity of photovoltaic power generation presents a “bubble growth” picture. The number of photovoltaic inverters required also increases, and the photovoltaic generation field has created an environment with improved performance and reduced costs.

Tianyuan Motor is the first company in Japan to use SiC diodes in photovoltaic inverters. At the seminar on July 3, “Influence of the Next-Generation Power Semiconductors”, Sakamoto delivered a speech titled “The Practical Application and Expectation of New Devices from the Inverter” to explain the power of inverter companies. The expectations placed on semiconductors.

The company's SiC diode inverters significantly reduce conversion losses by reducing switching losses and conduction losses. Although IGBTs (insulated gate bipolar transistors) are still required to be used in combination, in the future, through the full use of SiC, the estimated loss will be reduced by about 60%.

Sakamoto said that "the use of SiC diodes has not caused a significant increase in costs. If we can use all SiC, the cost may be reduced."

Sakamoto has appealed to power semiconductor developers for devices with a withstand voltage of more than 700V, an on-resistance of less than 25mΩ, and a saturation voltage of more than 14Vds. "We hope to be able to achieve the price of less than 1,000 yen." (Reporter: Takahashi Shizhong, Nikkei Technology)

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